Gallium vacancies and gallium antisites as acceptors in electron-irradiated semi-insulating GaAs

Journal Article · Fri Feb 14 23:00:00 EST 1992 · Physical Review, B: Condensed Matter; (United States)

DOI:https://doi.org/10.1103/PhysRevB.45.3386· OSTI ID:7047271

Corbel, C; Pierre, F ^[1]; Saarinen, K; Hautojaervi, P ^[2]; Moser, P ^[3]

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1. Centre d'Etudes Nucleaires de Saclay, Institut National des Sciences et Techniques Nucleaires, 91191 Gif-sur-Yvette CEDEX (France)
2. Laboratory of Physics, Helsinki University of Technology, 02150 Espoo (Finland)
3. Centre d'Etudes Nucleaires de Grenoble, Departement de Recherche Fondamentale, 38041 Grenoble CEDEX (France)

Positron-lifetime measurements show that acceptors are produced in semi-insulating GaAs by 1.5-MeV electron irradiation at 20 K. Two types of acceptors can be separated. The first ones are negative vacancy-type defects which anneal out over a very broad range of temperature between 77 and 500 K. The second ones are negative ion-type defects which are stable still at 450 K. The data show that these two types of defects are independent and do not form close pairs. We attribute both to gallium-related defects. We identify the ion-type acceptors as isolated gallium antisites. The vacancy-type acceptors are identified as gallium vacancies which are isolated or involved in negatively charged complexes. The introduction rate of the gallium antisite is estimated to be 1.8{plus minus}0.3 cm{sup {minus}1} in the fluence range 10{sup 17}--10{sup 18} cm{sup {minus}2} for 1.5-MeV electron irradiation at 20 K.

• OSTI ID: 7047271
• Journal Information: Physical Review, B: Condensed Matter; (United States), Journal Name: Physical Review, B: Condensed Matter; (United States) Vol. 45:7; ISSN 0163-1829; ISSN PRBMD
• Country of Publication: United States
• Language: English

Related Subjects

665300* -- Interactions Between Beams & Condensed Matter-- (1992-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
COLLISIONS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ELECTRON BEAMS
ENERGY RANGE
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LEPTON BEAMS
MEV RANGE
MEV RANGE 01-10
PARTICLE BEAMS
PHYSICAL RADIATION EFFECTS
PNICTIDES
POINT DEFECTS
RADIATION EFFECTS
TEMPERATURE RANGE
TEMPERATURE RANGE 0013-0065 K
TEMPERATURE RANGE 0065-0273 K
TEMPERATURE RANGE 0273-0400 K
TEMPERATURE RANGE 0400-1000 K
VACANCIES