Native and irradiation-induced monovacancies in n -type and semi-insulating GaAs

Journal Article · Tue May 15 04:00:00 EDT 1990 · Physical Review, B: Condensed Matter; (USA)

DOI:https://doi.org/10.1103/PhysRevB.41.10632· OSTI ID:6783559

Corbel, C; Pierre, F ^[1]; Hautojaervi, P; Saarinen, K ^[2]; Moser, P ^[3]

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1. Centre d'Etudes Nucleaires de Saclay, Institut National des Sciences et Techniques Nucleaires, 91191 Gif-sur-Yvette CEDEX (France)
2. Laboratory of Physics, Helsinki University of Technology, SF-02150 Espoo 15 (Finland)
3. Centre d'Etudes Nucleaires de Grenoble, Departement de Recherche Fondamentale, Institut de Recherche Fondamentale, 38041 Grenoble CEDEX (France)

Defects induced by electron irradiation in semi-insulating and {ital n}-type GaAs crystals have been characterized by positron-lifetime measurements. We conclude that electron irradiation with energies of 1.5--3 MeV produces negative monovacancies and negative ions at low and room temperature. The results also show that the native monovacancy defects in lightly {ital n}-type GaAs change their properties under irradiation. We relate this change to the existence of an ionization level {minus}{r arrow}0 or 0{r arrow}+ of the native monovacancy defects in the upper half of the band gap. We propose that irradiation produces negative Ga{sub As} antisites and negative {ital V}{sub Ga} vacancies. In {ital n}-type GaAs the behavior of the native defects under irradiation is in agreement with their earlier assignment to {ital V}{sub As}.

• OSTI ID: 6783559
• Journal Information: Physical Review, B: Condensed Matter; (USA), Journal Name: Physical Review, B: Condensed Matter; (USA) Vol. 41:15; ISSN PRBMD; ISSN 0163-1829
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ANTILEPTONS
ANTIMATTER
ANTIPARTICLES
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ELECTRONS
ELEMENTARY PARTICLES
ENERGY RANGE
FERMIONS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LEPTONS
LIFETIME
MATERIALS
MEV RANGE
MEV RANGE 01-10
N-TYPE CONDUCTORS
PHYSICAL RADIATION EFFECTS
PNICTIDES
POINT DEFECTS
POSITRONS
RADIATION EFFECTS
SEMICONDUCTOR MATERIALS
VACANCIES