Electrical characteristics of 25 nm Pr(ZrTi)O{sub 3} thin films grown on Si by metalorganic chemical vapor deposition

Journal Article · Tue Aug 15 04:00:00 EDT 2000 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.1305824· OSTI ID:20217176

Lin, C H ^[1]; Friddle, P A ^[1]; Lu, X ^[1]; Chen, Haydn ^[1]; Kim, Young ^[2]; Wu, T B ^[3]

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1. Materials Research Laboratory, Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States)
2. Material Research Laboratory, Center for Microanalysis of Materials, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States)
3. Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China (China)

Pb(Zr{sub 0.5}Ti{sub 0.5})O{sub 3} thin films 25 nm in thickness were grown on LaNiO{sub 3}/Pt/Ti buffered Si substrates at 600 degree sign C by metalorganic chemical vapor deposition. P-E studies showed a remanent polarization value of 8 {mu}C/cm{sup 2} with a coercive field of 200 kV/cm. In polarization fatigue studies, these films only showed slight degradation in remanent polarization up to 4x10{sup 8} cycles ({+-}3 V oscillation) before breakdown. Moreover, the effect of space charge on the C-V behavior of these films was illustrated I-V characteristics of these films were also described. (c) 2000 American Institute of Physics.

• OSTI ID: 20217176
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 4 Vol. 88; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CHEMICAL VAPOR DEPOSITION
EXPERIMENTAL DATA
FERROELECTRIC MATERIALS
MEMORY DEVICES
POLARIZATION
PZT
SILICON
THICKNESS
THIN FILMS