Superconductivity-induced effect on c-axis electronic Raman scattering in Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub 8+{delta}} single crystals

Journal Article · Wed Sep 01 04:00:00 EDT 1999 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.59626· OSTI ID:20216667

Liu, H L ^[1]; Blumberg, G ^[1]; Klein, M V ^[1]; Guptasarma, P ^[2]; Hinks, D G ^[2]

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1. Department of Physics and Science and Technology Center for Superconductivity, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801-3080 (United States)
2. Materials Science Division and Science and Technology Center for Superconductivity, Argonne National Laboratory, Argonne, Illinois 60439 (United States)

We report on the c-axis-polarized electronic Raman scattering of Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub 8+{delta}} single crystals with various oxygen concentrations. Below T{sub c}, there is a low-energy redistribution of the electronic continuum and the presence of a 2{delta} peak-like feature for all doping levels studied. The superconductivity-induced effect is also accumulated from frequencies as high as 40{delta}. (c) 1999 American Institute of Physics.

• OSTI ID: 20216667
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 483; ISSN APCPCS; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BISMUTH OXIDES
CALCIUM OXIDES
COPPER OXIDES
DOPED MATERIALS
ELECTRONIC STRUCTURE
EXPERIMENTAL DATA
HIGH-TC SUPERCONDUCTORS
RAMAN SPECTROSCOPY
STRONTIUM OXIDES