c -Axis Electronic Raman Scattering in Bi{sub 2} Sr{sub 2} CaCu{sub 2} O{sub 8+{delta} }

Journal Article · Thu Apr 01 04:00:00 EST 1999 · Physical Review Letters

DOI:https://doi.org/10.1103/PhysRevLett.82.3524· OSTI ID:341195

Liu, H L; Blumberg, G; Klein, M V ^[1]; Guptasarma, P; Hinks, D G ^[2]; Blumberg, G ^[3]

---

1. Department of Physics and Science and Technology Center for Superconductivity, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801-3080 (United States)
2. Materials Science Division and Science and Technology Center for Superconductivity, Argonne National Laboratory, Argonne, Illinois 60439 (United States)
3. Bell Laboratories, Lucent Technologies, 700 Mountain Avenue, Murray Hill, New Jersey 07974 (United States)

We report on the c -axis-polarized electronic Raman scattering of Bi{sub 2}Sr {sub 2}CaCu{sub 2}O{sub 8+{delta}} single crystals with various oxygen concentrations. In the normal state, a resonant electronic continuum extends to 1.5thinspthinspeV and gains significant intensity as the incoming photon energy increases. Below T{sub c} , a superconductivity-induced 2{Delta} peak is observed for {omega}{lt}80 meV and the 2{Delta}/k{sub B}T{sub c} value increases with decreasing hole doping. In particular, this A{sub 1g} 2{Delta} peak energy, which is higher than that seen with in-plane polarizations for all doping levels studied, signifies distinctly different dynamics of quasiparticles created with out-of-plane polarization. {copyright} {ital 1999} {ital The American Physical Society}

• DOE Contract Number: W-31109-ENG-38
• OSTI ID: 341195
• Journal Information: Physical Review Letters, Journal Name: Physical Review Letters Journal Issue: 17 Vol. 82; ISSN 0031-9007; ISSN PRLTAO
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BISMUTH OXIDES
CALCIUM OXIDES
DOPED MATERIALS
HIGH-TC SUPERCONDUCTORS
MONOCRYSTALS
POLARIZATION
RAMAN SPECTRA
STRONTIUM OXIDES