Nonlinear interlayer tunneling in a double-electron-layer structure
Journal Article
·
· Physical Review. B, Condensed Matter and Materials Physics
- Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
We present a theory for nonequilibrium two-dimensional to two-dimensional tunneling between two weakly tunnel-coupled electron layers when the chemical potentials of the two electron gases are arbitrarily biased. We first present an intuitive but rigorous second-order perturbation theory based on a transition-rate approach. Contributions from electron-impurity, interface-roughness, electron-electron, and electron-phonon interactions are considered. The validity of this result is established using a more general field-theoretic formalism by expressing the tunneling current as a current-current correlation function which can be evaluated employing a standard temperature-ordered Green's function technique and a Feynman-graph expansion. The formalism is exact to the second order in the tunneling integral and to all orders in the interactions and is useful for studying higher-order interaction effect. The relevance of the numerical results to recent experimental data from a GaAs/Al{sub x}Ga{sub 1-x}As double-electron-layer tunneling transistor (DELTT) at 77 K are discussed. These data show a large peak-to-valley ratio of the I-V curve. The room-temperature numerical results for the I-V curve show a reasonably large peak-to-valley ratio indicating the feasibility of room-temperature DELTT's. (c) 2000 The American Physical Society.
- OSTI ID:
- 20215762
- Journal Information:
- Physical Review. B, Condensed Matter and Materials Physics, Journal Name: Physical Review. B, Condensed Matter and Materials Physics Journal Issue: 12 Vol. 61; ISSN 1098-0121
- Country of Publication:
- United States
- Language:
- English
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