Contactless thermally stimulated lifetime measurements in detector-grade cadmium zinc telluride

Journal Article · Wed Mar 01 04:00:00 UTC 2000 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.372193· OSTI ID:20215426

Kessick, Royal ^[1]; Tepper, Gary ^[1]; Lee, Ed ^[2]; James, Ralph ^[2]

---

1. Virginia Commonwealth University, Department of Chemical Engineering, Richmond, Virginia 23284 (United States)
2. Sandia National Laboratories, Livermore, California 94551-0969 (United States)

Contactless thermally stimulated lifetime measurements were performed on detector-grade Cd{sub 1-x}Zn{sub x}Te (x{approx}0.1) crystals using a pulsed laser microwave cavity perturbation method. The carrier lifetime decreased from approximately 30 {mu}s at 110 K to 4 {mu}s at 160 K, and then remained relatively constant from 160 to 300 K. The sudden drop in carrier lifetime within a particular temperature range is consistent with the thermal activation of a charge trap with a detrapping time longer than the carrier lifetime. The maximum trap activation temperature and the minimum detrapping time are estimated from the lifetime versus temperature curve to be approximately 160 K and 10{sup -6} s, respectively. (c) 2000 American Institute of Physics.

• OSTI ID: 20215426
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 5 Vol. 87; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CADMIUM TELLURIDES
CARRIER LIFETIME
EXPERIMENTAL DATA
GAMMA RADIATION
RADIATION DETECTORS
TEMPERATURE DEPENDENCE
TRAPPING
ZINC TELLURIDES