In situ investigation of transport in semiconductors: A contactless approach

Journal Article · Thu Aug 15 04:00:00 EDT 1985 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.96125· OSTI ID:5576367

Skumanich, A; Fournier, D; Boccara, A C; Amer, N M

We present a spatially resolved contactless method for the study of electronic and thermal transport in semiconductors. The technique employs the deflection of a probe beam propagating through the material to measure thermal and electronic diffusivities, carrier lifetime, and surface recombination. This deflection results from both the thermally and electronically induced changes in the local index of refraction of the semiconductor.

• Research Organization: Center for Advanced Materials and Applied Physics and Laser Spectroscopy Group, Lawrence Berkeley Laboratory, University of California, Berkeley, California 94720
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 5576367
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 47:4; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
CARRIER LIFETIME
CHARGED-PARTICLE TRANSPORT
DIFFUSION
ELECTRO-OPTICAL EFFECTS
ELECTROMAGNETIC RADIATION
ELEMENTS
LASER RADIATION
LIFETIME
MEASURING METHODS
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
RADIATION TRANSPORT
RADIATIONS
RECOMBINATION
REFRACTIVITY
SEMIMETALS
SILICON
SPECTROSCOPY
THERMAL DIFFUSION
THERMAL DIFFUSIVITY
THERMODYNAMIC PROPERTIES