Photothermal investigation of transport in semiconductors: Theory and experiment

Journal Article · Sat Feb 01 04:00:00 EST 1986 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.336599· OSTI ID:6308558

Fournier, D; Boccara, C; Skumanich, A; Amer, N M

The photothermal deflection technique has been extended as a contactless, in situ method to investigate transport in solids with an emphasis on semiconductors. A theoretical model is developed which quantitatively describes the transport behavior, and is shown to be in excellent agreement with experimental results. For semiconductors, this approach yields the thermal diffusivity, the electronic diffusivity, the minority-carrier lifetime and the surface recombination velocity.

• Research Organization: Applied Physics and Laser Spectroscopy Group and Center for Advanced Materials, Lawrence Berkeley Laboratory, University of California, Berkeley, California 94720
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 6308558
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 59:3; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
CARRIER LIFETIME
DATA
ELECTRON MOBILITY
INFORMATION
LIFETIME
MATERIALS
MOBILITY
NUMERICAL DATA
ONE-DIMENSIONAL CALCULATIONS
PARTICLE MOBILITY
PHYSICAL PROPERTIES
RECOMBINATION
SEMICONDUCTOR MATERIALS
THEORETICAL DATA
THERMAL DIFFUSIVITY
THERMODYNAMIC PROPERTIES
TRANSPORT THEORY