Rapid thermal annealing behavior of amorphous SiC layers deposited by electron cyclotron resonance plasma
Journal Article
·
· Journal of the Electrochemical Society
- Univ. Autonoma de Madrid (Spain)
Hydrogenated amorphous silicon carbide, a-SiC:H, has been deposited by electron cyclotron resonance plasmas. Operating in methane excess (CH{sub 4}/SiH{sub 4} flow ratios between 2 and 4) and at high enough microwave powers, the deposited SiC films are close to stoichiometric. In these SiC layers, only small traces of the CH{sub n} and SiH{sub n} stretching bands can be detected. Rapid thermal annealing leads to nearly complete dehydrogenation of the SiC layers deposited under these conditions as deduced from ellipsometric and infrared spectroscopy.
- Sponsoring Organization:
- USDOE
- OSTI ID:
- 201408
- Journal Information:
- Journal of the Electrochemical Society, Journal Name: Journal of the Electrochemical Society Journal Issue: 1 Vol. 143; ISSN 0013-4651; ISSN JESOAN
- Country of Publication:
- United States
- Language:
- English
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