Surface morphology of silicon carbide layers deposited by cyclotron resonance plasma
Conference
·
OSTI ID:405517
- Universidad Autonoma de Madrid (Spain)
- ETS Ingenieros Industriales, Vallodolid (Spain)
- Universidad Autonoma de Madrid (Spain); and others
The surface morphology of Silicon Carbide layers grown by ERC (Electron Cyclotron Resonance) on (100) and (111) Si substrates has been studied by ex-situ Atomic Force Microscopy (AFM). The morphology was observed to depend on the deposition temperature and the CH{sub 4}/SiH{sub 4} flow ratio. RTA (Rapid Thermal Annealing) was also found to induce changes in the surface morphology. These changes are discussed in terms of the different growth parameters and the stoichiometry of the layers controlled by the flow ratio, as deduced from Fourier Transform Infrared (FTIR) spectroscopy and Spectroscopic Ellipsometry (SE) measurements.
- OSTI ID:
- 405517
- Report Number(s):
- CONF-951231--
- Country of Publication:
- United States
- Language:
- English
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