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Amorphous silicon solar cells with ethylene-based p/sup +/ layers

Journal Article · · Appl. Phys. Lett.; (United States)
DOI:https://doi.org/10.1063/1.101343· OSTI ID:6375775
The use of ethylene (C/sub 2/H/sub 4/) rather than methane (CH/sub 4/) as the source of carbon in the hydrogenated amorphous silicon carbide (a-SiC:H) p/sup +/ layer of hydrogenated amorphous silicon (a-Si:H) based solar cells deposited in a glow discharge has been explored. Device results are presented to demonstrate the utility of ethylene-based a-SiC:H for use in the p/sup +/ layer. Device results and material measurements reveal that the use of ethylene under the proper conditions can yield p/sup +/ a-SiC:H which has optical and transport properties which are at least as suitable as methane-based material.
Research Organization:
Solarex Corporation, Thin Films Division, 826 Newtown--Yardley Road, Newton, Pennsylvania 18940
OSTI ID:
6375775
Journal Information:
Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 54:16; ISSN APPLA
Country of Publication:
United States
Language:
English