Transmutation doping of III-nitrides
Conference
·
OSTI ID:20104755
Transmutation doping of (In, Ga, Al)N compounds by neutron irradiation is a promising and totally unexplored field to date. It is much more effective than that of Si due to large neutron capture cross section and abundance of In, Al and Ga isotopes participating in reaction. This should make the irradiation possible in low-flux reactors and result in smaller radiation damage. Annealing of the radiation damage seems feasible.
- Research Organization:
- Rockbit International Inc., Fort Worth, TX (US)
- OSTI ID:
- 20104755
- Country of Publication:
- United States
- Language:
- English
Similar Records
Nuclear transmutation doping of GaAs. Final technical report 1 Jun 80-30 Jun 81
Transmutation doping of silicon solar cells
Ultrashallow acceptors in neutron-transmutation-doped silicon
Technical Report
·
Tue Sep 01 00:00:00 EDT 1981
·
OSTI ID:5113878
Transmutation doping of silicon solar cells
Conference
·
Thu Mar 31 23:00:00 EST 1977
·
OSTI ID:7322516
Ultrashallow acceptors in neutron-transmutation-doped silicon
Journal Article
·
Mon Jul 15 00:00:00 EDT 1991
· Physical Review, B: Condensed Matter; (United States)
·
OSTI ID:5469167