Nuclear transmutation doping of GaAs. Final technical report 1 Jun 80-30 Jun 81

Technical Report · Tue Sep 01 04:00:00 EDT 1981

OSTI ID:5113878

Fritzsche, H

Shallow donors have been introduced into GaAs crystals by irradiation with thermal neutrons and subsequent nuclear transmutation. Good agreement was found between the measured concentrations of added donors and the values expected from the neutron capture cross sections and the neutron fluences used. This doping method is approximately 1000 times more efficient in GaAs than in Si because of the higher abundances and neutron capture cross sections of the transmutable isotopes in GaAs. In epitaxially grown GaAs of high purity, the recoil and radiation damage associated with transmutation doping can be removed by annealing at about 600 C which is below the critical temperature for As effusion. The electronic transport properties of transmutation doped GaAs samples were studied between 1.4 and 450K of concentrations both above and below the metal-nonmetal transition. We found that transmutation doping is a convenient method for introducing a desired concentration of shallow donors into GaAs crystals for modifying their electronic properties.

• Research Organization: Chicago Univ., IL (USA). James Franck Inst.
• OSTI ID: 5113878
• Report Number(s): AD-A-110433/0
• Country of Publication: United States
• Language: English

Related Subjects

38 RADIATION CHEMISTRY, RADIOCHEMISTRY, AND NUCLEAR CHEMISTRY
400600* -- Radiation Chemistry
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
BARYON REACTIONS
BARYONS
CAPTURE
CROSS SECTIONS
ELECTRON TRANSFER
ELECTRONIC STRUCTURE
ELEMENTARY PARTICLES
FERMIONS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HADRON REACTIONS
HADRONS
HEAT TREATMENTS
IRRADIATION
NEUTRON REACTIONS
NEUTRONS
NUCLEAR REACTIONS
NUCLEON REACTIONS
NUCLEONS
PNICTIDES
RADIATION EFFECTS
THERMAL NEUTRONS
TRANSMUTATION