Ca dopant site within ion implanted GaN lattice
The authors have investigated the Ca dopant site within the GaN lattice using ion channeling in combination with Rutherford backscattering spectrometry (RBS), particle induced x ray emission (PIXE) and nuclear reaction analysis (NRA). Metalorganic chemical vapor deposition (MOCVD) grown GaN on c-plane sapphire substrates implanted with {sup 40}Ca at a dose of 1 x 10{sup 15} cm{sup {minus}2} with post-implant annealing were investigated. The channeling results indicate that more than 80% of Ca are near Ga sites even in as-implanted samples, however, they are displaced by {approximately} 0.2 {angstrom} from the Ga sites and that the Ca goes to the exact Ga sites after annealing at 1,100 C. They think that the displaced Ca in the as-implanted samples are electrically compensated due to formation of complex defects with donor like point defects, such as Ca{sub Ga}-V{sub N} and/or Ca{sub Ga}-Ga{sub N}, and that Ca{sub Ga} becomes electrically active when these complex defects are broken and the point defects diffuse away with annealing at 1,100 C.
- Research Organization:
- State Univ. of New York, Albany, NY (US)
- OSTI ID:
- 20104738
- Country of Publication:
- United States
- Language:
- English
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