The effect of nitrogen ion damage on the optical and electrical properties of MBE GaN grown on MOCVD GaN/sapphire templates[Molecular Beam Epitaxy, Metal Organic Chemical Vapor Deposition]
Conference
·
OSTI ID:20104623
The authors have established a correlation between localized states responsible for mid-gap optical emission and film mobility of GaN grown under different nitrogen conditions. By imposing a deflector voltage at the tip of the plasma source, the authors varied the ion-neutral flux ratio to determine how N ions affect mid-gap luminescence and electrical mobility. Low energy electron-excited nanometer scale luminescence (LEEN) spectroscopy in ultrahigh vacuum (UHV) showed mid-gap emission intensities in the bulk that decreased in the ratio, 50:1.3:1 with increasing deflector voltage. Hall measurements indicated over a factor of two increase in mobility, and a factor of 8 decrease in residual charge density with increasing deflector voltage. The correlation of optical and electrical properties with a reduction in N ion flux suggests the primary role of native defects, such as N or Ga vacancies, in the mid-gap emissions.
- Research Organization:
- Ohio State Univ., Columbus, OH (US)
- OSTI ID:
- 20104623
- Country of Publication:
- United States
- Language:
- English
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