Observation of stimulated emission from an MBE grown GaN film on sapphire
Conference
·
OSTI ID:10106168
- Lawrence Livermore National Lab., CA (United States)
- Lawrence Berkeley Lab., CA (United States)
The authors report the first observation of optically pumped stimulated emission from an GaN epilayer at 77K and at room temperature grown by reactive ion-beam molecular beam epitaxy. The observed uv optical emission profile was a nonlinear function of the pump power density, with line narrowing at threshold power densities. The similarity in the emission profile as compared with those of films grown with low-pressure metal-organic chemical vapor deposition and metal-organic vapor phase epitaxy techniques will be noted.
- Research Organization:
- Lawrence Livermore National Lab., CA (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- W-7405-ENG-48
- OSTI ID:
- 10106168
- Report Number(s):
- UCRL-JC--115682; CONF-9311138--1; ON: DE94003638
- Country of Publication:
- United States
- Language:
- English
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