New results on the microstructure of amorphous silicon as observed by internal friction
The authors have measured the low temperature internal friction (Q{sup {minus}1}) of amorphous silicon (a-Si) films. Electron-beam evaporation leads to the well-known temperature-independent Q{sub 0}{sup {minus}1} plateau common to all amorphous solids. For hydrogenated amorphous silicon (a-Si:H) with about 1 at.% H produced by hot wire chemical vapor deposition, however, the value of Q{sub 0}{sup {minus}1} is over two hundred times smaller than for e-beam a-Si. This is the first observation of an amorphous solid without any significant low energy excitations. This finding offers the opportunity to study amorphous solids containing controlled densities of tunneling defects, and thus to explore their nature.
- Research Organization:
- National Renewable Energy Lab., Golden, CO (US)
- Sponsoring Organization:
- National Science Foundation; US Department of Energy
- DOE Contract Number:
- AC02-83CH10093
- OSTI ID:
- 20085481
- Country of Publication:
- United States
- Language:
- English
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