A chemical bonding model for photo-induced defects in hydrogenated amorphous silicon (a-Si:H): Intrinsic and extrinsic reaction pathways
Conference
·
OSTI ID:20085457
In device grade a-Si:H photo- or light-induced defect generation is an intrinsic effect for impurity concentrations of oxygen and nitrogen below about 10{sup 19} to 10{sup 20} cm{sup {minus}3}; however, at higher concentrations it increases with increasing impurity content. Charged defect configurations are identified by empirical chemistry and are studied by ab initio calculations. This paper addresses: (1) the chemical stability of charged defects; (2) the reaction pathways for defect metastability; and (3) the transition between extrinsic and intrinsic behavior.
- Research Organization:
- North Carolina State Univ., Raleigh, NC (US)
- Sponsoring Organization:
- US Department of the Navy, Office of Naval Research (ONR)
- OSTI ID:
- 20085457
- Resource Relation:
- Conference: Amorphous and Microcrystalline Silicon Technology - 1997, San Francisco, CA (US), 03/31/1997--04/04/1997; Other Information: PBD: 1997; Related Information: In: Amorphous and microcrystalline silicon technology--1997. Materials Research Society symposium proceedings, Volume 467, by Wagner, S.; Hack, M.; Schiff, E.A.; Schropp, R.; Shimizu, I. [eds.], 999 pages.
- Country of Publication:
- United States
- Language:
- English
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