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High Voltage Regrown GaN P-N Diodes Enabled by Defect and Doping.

Conference ·
OSTI ID:2006294
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Abstract not provided.

Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States); Sandia National Laboratories,, Livermore, CA
Sponsoring Organization:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
DOE Contract Number:
NA0003525
OSTI ID:
2006294
Report Number(s):
SAND2022-16876D; 712484
Country of Publication:
United States
Language:
English

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