PCB-on-DBC GaN Power Module Design with High-Density Integration and Double-Sided Cooling

Tian, Xingyue; Jia, Niu; DeVoto, Douglas; Paret, Paul; Bai, Hua; Tolbert, Leon M.; Cui, Han

doi:10.1109/tpel.2023.3311440

PCB-on-DBC GaN Power Module Design with High-Density Integration and Double-Sided Cooling

Journal Article · Tue Sep 05 04:00:00 EDT 2023 · IEEE Transactions on Power Electronics

DOI:https://doi.org/10.1109/tpel.2023.3311440· OSTI ID:2005584

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Univ. of Tennessee, Knoxville, TN (United States)
National Renewable Energy Laboratory (NREL), Golden, CO (United States)

Lateral gallium nitride (GaN) high-electron-mobility transistors (HEMTs) present better electrical characteristics compared to silicon or silicon carbide devices such as high switching speed and low gate charge, but also present additional challenges on the module design. Here, this paper discusses a high-density GaN power module with double-sided cooling, low inductance, on-package decoupling capacitors, and integrated gate drivers. The GaN dies as well as the gate drive are sandwiched between the printed circuit board (PCB) and direct bonded copper (DBC) substrate to achieve compact loop and double-sided cooling effect. Design considerations and thermal performance are analyzed. A module assembly procedure is presented utilizing the layer-by-layer attachment process. Finally, a 2.7 cm x 1.8 cm half-bridge GaN power module is fabricated and tested, achieving a low power-loop inductance of 1.03 nH, and the overshoot voltage of the switching waveform is less than 5% under a 400-V/25-A double-pulse test. The thermal resistance is 0.32 K/W, verified by simulation and experimental results. The design and assembly process can be generalized and applied to high power applications to achieve high power density and high performance.

View Accepted Manuscript (DOE)

Research Organization:: National Renewable Energy Laboratory (NREL), Golden, CO (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE)

Grant/Contract Number:: AC36-08GO28308

OSTI ID:: 2005584

Report Number(s):: NREL/JA-5400-85361; MainId:86134; UUID:019359be-c31e-4b83-8d76-7476e5dec520; MainAdminID:70741

Journal Information:: IEEE Transactions on Power Electronics, Journal Name: IEEE Transactions on Power Electronics Journal Issue: 1 Vol. 39; ISSN 0885-8993

Publisher:: IEEECopyright Statement

Country of Publication:: United States

Language:: English

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37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
GaN
double-sided cooling
embedding technology
hybrid PCB and DBC technology
integrated gate driver
parasitic inductance
power module

PCB-on-DBC GaN Power Module Design with High-Density Integration and Double-Sided Cooling

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