Skip to main content
OSTI.GOVU.S. Department of Energy Office of Scientific and Technical Information
U.S. Department of Energy
Office of Scientific and Technical Information
 

Layout Dependence of Total Ionizing Dose Effects on 12-nm Bulk FinFET Digital Structures .

Conference ·
DOI:https://doi.org/10.2172/2004075· OSTI ID:2004075
; ; ; ; ; ; ; ; ; ; ; ; ; ; ;

Abstract not provided.

Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States); Sandia National Laboratories,, Livermore, CA
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
DOE Contract Number:
NA0003525
OSTI ID:
2004075
Report Number(s):
SAND2022-9662C; 708295
Country of Publication:
United States
Language:
English

Similar Records

Total ionizing dose and single event effects on 12-nm bulk FinFETs.
Conference · Mon Jan 31 23:00:00 EST 2022 · OSTI ID:2001871
Single Event Upset and Total Ionizing Dose Response of 12LP FinFET Digital Circuits.
Conference · Fri Jul 01 00:00:00 EDT 2022 · OSTI ID:2004036
Single Event Upset and Total Ionizing Dose Response of 12LP FinFET Digital Circuits.
Conference · Fri Jul 01 00:00:00 EDT 2022 · OSTI ID:2004078

Related Subjects