Study of Avalanche Behavior in 3 kV GaN Vertical P-N Diode under UIS Stress for Edge-Termination Optimization.

Conference · Wed Jun 01 00:00:00 EDT 2022

DOI:https://doi.org/10.1109/IRPS48227.2022.9764525· OSTI ID:2003803

Shankar, Bhawani; Bian, Zhengliang; Zeng, Ke; Meng, Chuanzhe; Martinez, Rafael Perez; Chowdhury, Srabanti; Gunning, Brendan; Flicker, Jack; Binder, Andrew; Dickerson, Jeramy; Kaplar, Robert

Abstract not provided.

• Research Organization: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
• Sponsoring Organization: USDOE Advanced Research Projects Agency - Energy (ARPA-E)
• DOE Contract Number: NA0003525
• OSTI ID: 2003803
• Report Number(s): SAND2022-8684C; 707657
• Country of Publication: United States
• Language: English