Study of Avalanche Behavior in 3 kV GaN Vertical P-N Diode under UIS Stress for Edge-Termination Optimization.
Abstract not provided.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE Advanced Research Projects Agency - Energy (ARPA-E)
- DOE Contract Number:
- NA0003525
- OSTI ID:
- 2003803
- Report Number(s):
- SAND2022-8684C; 707657
- Resource Relation:
- Conference: Proposed for presentation at the Proceedings of the 2022 IEEE International Reliability Physics Symposium (IRPS) held March 27-31, 2022 in Dallas, TX.
- Country of Publication:
- United States
- Language:
- English
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