Interface Trap Density Characterization of ALD Gate Dielectrics for GaN Power MOSFETs.
Abstract not provided.
- Research Organization:
- Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- NA0003525
- OSTI ID:
- 2003786
- Report Number(s):
- SAND2022-8575C; 707594
- Country of Publication:
- United States
- Language:
- English
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