Analysis of ALD Dielectric Leakage in Bulk GaN MOS Devices.

Glaser, Caleb; Binder, Andrew T.; Yates, Luke; Allerman, Andrew; Feezell, Daniel; Kaplar, Robert

doi:10.1109/WiPDA49284.2021.9645149

Analysis of ALD Dielectric Leakage in Bulk GaN MOS Devices.

Conference · Wed Sep 01 00:00:00 EDT 2021

DOI:https://doi.org/10.1109/WiPDA49284.2021.9645149· OSTI ID:1889561

Glaser, Caleb; Binder, Andrew T.; Yates, Luke; Allerman, Andrew; Feezell, Daniel; Kaplar, Robert

Abstract not provided.

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Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

DOE Contract Number:: NA0003525

OSTI ID:: 1889561

Report Number(s):: SAND2021-10994C; 700189

Country of Publication:: United States

Language:: English

References (13)

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Recent development of vertical GaN power devices Oka, Tohru Japanese Journal of Applied Physics, Vol. 58, Issue SB https://doi.org/10.7567/1347-4065/ab02e7	journal	April 2019
Accurate evaluation of interface state density in SiC metal-oxide-semiconductor structures using surface potential based on depletion capacitance Yoshioka, Hironori; Nakamura, Takashi; Kimoto, Tsunenobu Journal of Applied Physics, Vol. 111, Issue 1 https://doi.org/10.1063/1.3673572	journal	January 2012
Approaching the limits of dielectric breakdown for SiO2 films deposited by plasma-enhanced atomic layer deposition Usui, Takane; Donnelly, Christine A.; Logar, Manca Acta Materialia, Vol. 61, Issue 20 https://doi.org/10.1016/j.actamat.2013.09.003	journal	December 2013
Materials and processing issues in vertical GaN power electronics Hu, Jie; Zhang, Yuhao; Sun, Min Materials Science in Semiconductor Processing, Vol. 78 https://doi.org/10.1016/j.mssp.2017.09.033	journal	May 2018
Understanding the Leakage Mechanisms and Breakdown Limits of Vertical GaN-on-Si p+n−n Diodes: The Road to Reliable Vertical MOSFETs Mukherjee, Kalparupa; De Santi, Carlo; Buffolo, Matteo Micromachines, Vol. 12, Issue 4 https://doi.org/10.3390/mi12040445	journal	April 2021
Impact of annealing on ALD Al₂O₃ gate dielectric for GaN MOS devices Marron, Thomas; Takashima, Shinya; Li, Zhongda physica status solidi c, Vol. 9, Issue 3-4 https://doi.org/10.1002/pssc.201100414	journal	December 2011
High dielectric constant oxides Robertson, J. The European Physical Journal Applied Physics, Vol. 28, Issue 3, p. 265-291 https://doi.org/10.1051/epjap:2004206	journal	December 2004
The Trench Power MOSFET: Part I—History, Technology, and Prospects Williams, Richard K.; Darwish, Mohamed N.; Blanchard, Richard A. IEEE Transactions on Electron Devices, Vol. 64, Issue 3 https://doi.org/10.1109/TED.2017.2653239	journal	March 2017
MOSFET gate leakage modeling and selection guide for alternative gate dielectrics based on leakage considerations No authors listed IEEE Transactions on Electron Devices, Vol. 50, Issue 4 https://doi.org/10.1109/TED.2003.812504	journal	April 2003
Growth characteristics and electrical properties of Ta2O5 grown by thermal and O3-based atomic layer deposition on TiN substrates for metal–insulator–metal capacitor applications Kim, Min-Kyu; Kim, Woo-Hee; Lee, Taeyoon Thin Solid Films, Vol. 542 https://doi.org/10.1016/j.tsf.2013.06.050	journal	September 2013
Electrical properties of HfO2 deposited via atomic layer deposition using Hf(NO3)4 and H2O Conley, J. F.; Ono, Y.; Solanki, R. Applied Physics Letters, Vol. 82, Issue 20 https://doi.org/10.1063/1.1575934	journal	May 2003
Characterization of atomic layer deposition HfO ₂ , Al ₂ O ₃ , and plasma-enhanced chemical vapor deposition Si ₃ N ₄ as metal–insulator–metal capacitor dielectric for GaAs HBT technology Yota, Jiro; Shen, Hong; Ramanathan, Ravi Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 31, Issue 1 https://doi.org/10.1116/1.4769207	journal	January 2013

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