2-D model of a large area inductively coupled, rectangular plasma source for CVD
Conference
·
OSTI ID:20034302
A novel design for an inductively coupled, rectangular plasma source is described. The design encompasses several key issues of large area thin film growth by CVD: structural integrity; electrostatic screening; substrate temperature control; and maximal growth surface. A test reactor has been utilized to grow diamond films over {approximately} 1,800 cm{sup 2} at 13 MHz and {approximately} 1 torr pressure with 45 kW coupled power. The design is readily scalable to larger areas. To analyze the axial plasma uniformity, a 2-D simulation model is presented. The electromagnetic coupling, non-equilibrium plasma chemistry, and multi-species diffusion are self-consistently treated. In this 2-D approach, the slotted Faraday screen behaves as a diamagnetic medium in transmitting the magnetic field. Results are compared with experimental data for the hydrogen plasma extent, electron, and gas temperatures. Neutral gas thermal conduction and hydrogen recombination dominate the energy deposition to the wall, and in turn govern the plasma length. A tradeoff between quality and growth area is predicted for the reactor as the pressure is decreased.
- Research Organization:
- Naval Research Lab., Washington, DC (US)
- Sponsoring Organization:
- Defense Advanced Research Project Agency
- OSTI ID:
- 20034302
- Country of Publication:
- United States
- Language:
- English
Similar Records
Controlling the morphology of CVD films
Integrated model for plasma CVD and etch processes
Bi-Sr-Ca-Cu-O film on sapphire grown by plasma-enhanced halide CVD
Journal Article
·
Wed Jun 01 00:00:00 EDT 1994
· AIChE Journal (American Institute of Chemical Engineers); (United States)
·
OSTI ID:7257642
Integrated model for plasma CVD and etch processes
Conference
·
Sat Dec 30 23:00:00 EST 1995
·
OSTI ID:153900
Bi-Sr-Ca-Cu-O film on sapphire grown by plasma-enhanced halide CVD
Conference
·
Thu Feb 28 23:00:00 EST 1991
· IEEE Transactions on Magnetics (Institute of Electrical and Electronics Engineers); (United States)
·
OSTI ID:5933010