Bi-Sr-Ca-Cu-O film on sapphire grown by plasma-enhanced halide CVD

Conference · Fri Mar 01 04:00:00 EST 1991 · IEEE Transactions on Magnetics (Institute of Electrical and Electronics Engineers); (United States)

OSTI ID:5933010

Kimura, T; Nakao, H; Yamawaki, H; Ihara, M; Ozeki, M ^[1]

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1. Fujitsu Lab., Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-01 (JP)

This paper reports on plasma-enhanced halide chemical vapor deposition (CVD) for Bi-Sr-Ca-Cu-O (BSCCO) thin film. Superconducting BSCCO films were fabricated on 3-inch diameter sapphire substrates without postannealing. The CVD apparatus has four source-gas generation cells in which source materials (BiCl{sub 3}, SrI{sub 2}, CaI{sub 2}, and CuI) are evaporated or sublimated by heaters. Source gases are carried to the deposition chamber with helium. Oxidizing gases are O{sub 2} and/or H{sub 2}O. The total pressure in the deposition chamber was 0.1 torr and the O{sub 2} partial pressure 0.01 torr. Deposition was a 2 {Angstrom}/min on sapphire.

• OSTI ID: 5933010
• Report Number(s): CONF-900944--
• Conference Information: Journal Name: IEEE Transactions on Magnetics (Institute of Electrical and Electronics Engineers); (United States) Journal Volume: 27:2
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360201* -- Ceramics
Cermets
& Refractories-- Preparation & Fabrication
ALKALINE EARTH METAL COMPOUNDS
BISMUTH COMPOUNDS
BISMUTH OXIDES
CALCIUM COMPOUNDS
CALCIUM OXIDES
CHALCOGENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
COPPER COMPOUNDS
COPPER OXIDES
CORUNDUM
CRITICAL CURRENT
CURRENT DENSITY
CURRENTS
DEPOSITION
ELECTRIC CURRENTS
FABRICATION
FILMS
MINERALS
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
PARTIAL PRESSURE
SAPPHIRE
STRONTIUM COMPOUNDS
STRONTIUM OXIDES
SUBSTRATES
SUPERCONDUCTING FILMS
SURFACE COATING
TRANSITION ELEMENT COMPOUNDS