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Controlling the morphology of CVD films

Journal Article · · AIChE Journal (American Institute of Chemical Engineers); (United States)
 [1]; ;  [2]
  1. Univ. of Nebraska, Lincoln, NE (United States). Dept. of Chemical Engineering
  2. State Univ. of New York, Amherst, NY (United States). Dept. of Chemical Engineering
The morphology of the gas-solid interface during typical chemical vapor deposition (CVD) processes is investigated. The dynamic behavior of the interface depends on many factors, including local curvature of the film, reactant diffusion, adsorption equilibrium, surface kinetics, and mobility of adatoms. These factors depend on material properties of the system and reactor conditions, such as the deposition temperature and pressure. A 2-D model proposed describes the evolution of the interface in Cartesian coordinates under the influence of stabilizing and destabilizing effects. A linear stability analysis is used to predict under which conditions a planar interface becomes unstable. Stability criteria of a simplified 1-D analysis is not necessarily valid if the real system has more than one dimension. The substrate temperature and reactor pressure are important factors affecting the stability of film growth and thus the morphology of CVD films. An increase in temperature stabilizes planar film growth if the deposition is diffusion-limited, but destabilizes it if the process is reaction-controlled. The reactor pressure has a destabilizing effect on planar film growth during a typical CVD process.
OSTI ID:
7257642
Journal Information:
AIChE Journal (American Institute of Chemical Engineers); (United States), Journal Name: AIChE Journal (American Institute of Chemical Engineers); (United States) Vol. 40:6; ISSN 0001-1541; ISSN AICEAC
Country of Publication:
United States
Language:
English