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Improved noise performance from the next-generation buried-channel p-MOSFET SiSeROs

Journal Article · · Journal of Astronomical Telescopes, Instruments, and Systems
 [1];  [2];  [2];  [2];  [3];  [4];  [2];  [3];  [4];  [5];  [4];  [3]
  1. Stanford Univ., CA (United States); SLAC
  2. Stanford Univ., CA (United States)
  3. Massachusetts Inst. of Technology (MIT), Lexington, MA (United States). Lincoln Lab.
  4. Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States). Kavli Institute for Astrophysics and Space Research
  5. Stanford Univ., CA (United States); SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States)

The Single electron Sensitive Read Out (SiSeRO) is a novel on-chip charge detector output stage for charge-coupled device (CCD) image sensors. Developed at MIT Lincoln Laboratory, this technology uses a p-MOSFET transistor with a depleted internal gate beneath the transistor channel. The transistor source-drain current is modulated by the transfer of charge into the internal gate. At Stanford, we have developed a readout module based on the drain current of the on-chip transistor to characterize the device. In our earlier work, we characterized a number of first prototype SiSeROs with the MOSFET transistor channels at the surface layer. An equivalent noise charge (ENC) of around 15 electrons root mean square (RMS) was obtained. In this work, we examine the first buried-channel SiSeRO. Here we have achieved substantially improved noise performance of around 4.5 electrons root mean square (RMS) and a full width half maximum (FWHM) energy resolution of 132 eV at 5.9 keV, for a readout speed of 625 kpixel/s. We also discuss how digital filtering techniques can be used to further improve the SiSeRO noise performance. Additional measurements and device simulations will be essential to further mature the SiSeRO technology. This new device class presents an exciting new technology for the next-generation astronomical X-ray telescopes requiring fast, low-noise, radiation-hard megapixel imagers with moderate spectroscopic resolution.

Research Organization:
SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States)
Sponsoring Organization:
USDOE Office of Science (SC); National Aeronautics and Space Administration (NASA)
Grant/Contract Number:
AC02-76SF00515
OSTI ID:
2002889
Journal Information:
Journal of Astronomical Telescopes, Instruments, and Systems, Journal Name: Journal of Astronomical Telescopes, Instruments, and Systems Journal Issue: 02 Vol. 9; ISSN 2329-4124
Publisher:
SPIECopyright Statement
Country of Publication:
United States
Language:
English

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