Achieving Single-Electron Sensitivity at Enhanced Speed in Fully-Depleted CCDs with Double-Gate MOSFETs
- Cordoba U.
- MIT, Lincoln Lab
- Fermilab
- LBL, Berkeley
We introduce a new output amplifier for fully-depleted thick p-channel CCDs based on double-gate MOSFETs. The charge amplifier is an n-type MOSFET specifically designed and operated to couple the fully-depleted CCD with high charge-transfer efficiency. The junction coupling between the CCD and MOSFET channels has enabled high sensitivity, demonstrating sub-electron readout noise in one pixel charge measurement. We have also demonstrated the non-destructive readout capability of the device. Achieving single-electron and single-photon per pixel counting in the entire CCD pixel array has been made possible through the averaging of a small number of samples. We have demonstrated fully-depleted CCD readout with better performance than the floating diffusion and floating gate amplifiers available today, in both single and multisampling regimes, boasting at least six times the speed of floating gate amplifiers.
- Research Organization:
- Fermi National Accelerator Laboratory (FNAL), Batavia, IL (United States); Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), High Energy Physics (HEP) (SC-25)
- DOE Contract Number:
- AC02-07CH11359
- OSTI ID:
- 2212428
- Report Number(s):
- FERMILAB-PUB-23-630-ETD-PPD; arXiv:2310.13644; oai:inspirehep.net:2713120
- Journal Information:
- TBD, Journal Name: TBD
- Country of Publication:
- United States
- Language:
- English
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