Wetting and adhesion in metal-silicon carbide systems: The effect of surface polarity of SiC
Crystallographic polarity is an important feature of surfaces of both hexagonal ({alpha}) and cubic ({beta}) SiC. The structure of {alpha}-SiC perpendicular to the <0001> axis (a similar description holds for the (111) surface of {Beta}-SiC) consists of hexagonal double layers, each sub-layer being occupied by only one type of atom, Si or C. Consequently in the same crystal two polar surfaces of different chemical nature exist: the ideal (0001) and (000{bar 1}) polar faces which are terminated with a layer of Si and C atoms respectively. (0001)-Si and (000{bar 1})-C surfaces have different oxidation rates, and electronic properties, different nucleation rates when grown from the vapor phase and different behavior in chemical etching. The last difference is often employed to distinguish the polar faces. Given the major benefits of SiC as a semiconductor compound, numerous experimental and theoretical studies over the past fifteen years have been devoted to the atomic and electronic structure of SiC polar faces. In this study, the wetting of the two polar faces of {alpha}-SiC by non reactive metallic melts (molten Si and two metal-silicon alloys) is investigated by the sessile drop technique in order to measure the contact angle {theta} of a liquid drop on a flat substrate. The results are used to discuss the nature of predominant alloy-SiC interfacial interactions.
- Research Organization:
- CNRS, Saint Martin d'Heres (FR)
- OSTI ID:
- 20023077
- Journal Information:
- Scripta Materialia, Journal Name: Scripta Materialia Journal Issue: 2 Vol. 42; ISSN 1359-6462; ISSN SCMAF7
- Country of Publication:
- United States
- Language:
- English
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