Morphology of graphene on SiC(0001) surfaces.

Journal Article · Wed Dec 31 23:00:00 EST 2008 · Appl. Phys. Lett.

DOI:https://doi.org/10.1063/1.3207757· OSTI ID:963279

Luxmi, P; Fisher, J; Srivastava, N; Feenstra, R M; Sun, Y; Kedzierski, J; Healey, P; Gu, G; Sarnoff, Corp

Graphene is formed on SiC(000{bar 1}) surfaces (the so-called C-face of the crystal) by annealing in vacuum, with the resulting films characterized by atomic force microscopy, Auger electron spectroscopy, scanning Auger microscopy, and Raman spectroscopy. Morphology of these films is compared with the graphene films grown on SiC(0001) surfaces (the Si-face). Graphene forms a terraced morphology on the C-face, whereas it forms with a flatter morphology on the Si-face. It is argued that this difference occurs because of differing interface structures in the two cases. For certain SiC wafers, nanocrystalline graphite is found to form on top of the graphene.

• Research Organization: Argonne National Laboratory (ANL)
• Sponsoring Organization: SC; NSF; Air Force Research Lab.
• DOE Contract Number: AC02-06CH11357
• OSTI ID: 963279
• Report Number(s): ANL/CNM/JA-65029
• Journal Information: Appl. Phys. Lett., Journal Name: Appl. Phys. Lett. Journal Issue: 2009 Vol. 95; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: ENGLISH

Related Subjects

36 MATERIALS SCIENCE
CARBONACEOUS MATERIALS
MORPHOLOGY
SILICON CARBIDES
SUBSTRATES