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Resistivity anisotropy and Hall coefficient of Pb-doped Bi2212 single crystals

Journal Article · · Journal of Low Temperature Physics
In-plane and out-of-plane resistivity and Hall coefficient measurements were carried out on Bi{sub 2.1{minus}x}Pb{sub x}Sr{sub 2}CaCu{sub 2}O{sub y} (x = 0 {approximately} 0.6) single crystals with various oxygen concentration. The resistivity anisotropy {gamma}{sup 2} (= {rho}{sub c}/({rho}{sub a} {rho}{sub b}){sup 1/2}) was decreased with an increase of oxygen concentration and Pb content. Hall coefficient, R{sub H}, measurement revealed that the Pb-doping increases carrier concentration in the present system, however, its essential effect on reducing anisotropy was confirmed by comparing R{sub H} and {gamma}{sup 2} of the Pb-free and Pb-doped crystals.
Research Organization:
Univ. of Tokyo (JP)
OSTI ID:
20015297
Journal Information:
Journal of Low Temperature Physics, Journal Name: Journal of Low Temperature Physics Journal Issue: 5-6 Vol. 117; ISSN 0022-2291; ISSN JLTPAC
Country of Publication:
United States
Language:
English

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