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Variable Hall coefficient in Bi sub 2 Sr sub 2 CaCu sub 2 O sub 8 minus x across the metal-insulator transition

Journal Article · · Physical Review (Section) B: Condensed Matter; (USA)
;  [1]
  1. Department of Physics, University of California at Berkeley, Berkeley, CA (USA) Materials and Chemical Sciences Division, Lawrence Berkeley Laboratory, Berkeley, California 94720 (USA)

Measurements are reported of the Hall coefficient {ital R}{sub {ital H}} and {ital ab}-plane resistivity for single-crystal Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub 8{minus}{ital x}}, with variable oxygen configuration. As the system is driven through the metal- insulator'' transition, {ital R}{sub {ital H}} increases strongly but continues to obey the empirical expression 1/{ital R}{sub {ital H}}={gamma}+{beta}T, where {ital T} is the temperature. For low oxygen content the Hall mobility {mu}{sub {ital H}} becomes temperature independent. We examine these results in terms of various normal-state transport models.

DOE Contract Number:
AC03-76SF00098
OSTI ID:
5117587
Journal Information:
Physical Review (Section) B: Condensed Matter; (USA), Journal Name: Physical Review (Section) B: Condensed Matter; (USA) Vol. 40:16; ISSN 0163-1829; ISSN PRBMD
Country of Publication:
United States
Language:
English