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Temperature dependences of the Hall and magnetoresistance coefficients of vanadium and tantalum single crystals: Anisotropy of electron-phonon scattering

Journal Article · · Sov. Phys. - JETP (Engl. Transl.); (United States)
OSTI ID:6303727
The Hall coefficient R/sub H/(T), transverse magnetoresistance rho/sub c/(T), and the temperature-dependent component rho/sub c/(T) of the impurity electrical resistance are measured as functions of temperature T = 4.2--300 K for vanadium and tantalum single crystals with rho/sub 273.2//rho/sub 4.2/ = 1350 and 500, respectively. The curves R/sub H/(T) have minima at T0 = 33 and 24 K for vanadium and tantalum, respectively, which indicates that the electron-phonon scattering is anisotropic. The anisotropy is caused by ''intersheet'' electron-phonon processes in which the charge carriers are scattered between the open hole surface GAMMAH3h and the closed hole ellipsoids N3h. The curves r/sub H/(T) and rho/sub c/(T) have maxima for T close to T0. The observed extrema have a common physical origin and can be explained by the Kagan-Zhernov-Flerov theory, which postulates that the nonequilibrium part of the electron distribution function is anisotropic. The observed dependence R/sub H/(T) for T>T0 agrees with calculations of R/sub H/(T) for vanadium based on realistic models for the electron and phonon spectra, including the anisotropy for the electron-phonon interaction matrix element.
Research Organization:
Institute of Metal Physics, Ural Science Center, Academy of Sciences of the USSR, and S. M. Kirov Ural Polytechnic Institute, Sverdlovsk
OSTI ID:
6303727
Journal Information:
Sov. Phys. - JETP (Engl. Transl.); (United States), Journal Name: Sov. Phys. - JETP (Engl. Transl.); (United States) Vol. 62:1; ISSN SPHJA
Country of Publication:
United States
Language:
English

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