Hardness assurance implications of bimodal total dose response in a bipolar linear voltage comparator
Journal Article
·
· IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers)
- and others
The total dose response of transistors and circuits from a single wafer lot has been measured for high and low dose rate and elevated temperature irradiations. A bimodal irradiation response is observed in the circuit response that is shown to be a result of the input transistors. Hardness assurance sampling plans are examined for their adequacy to deal with the bimodal response distributions.
- Research Organization:
- Naval Surface Warfare Center, Crane, IN (US)
- OSTI ID:
- 20014720
- Journal Information:
- IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers) Journal Issue: 6Pt1 Vol. 46; ISSN 0018-9499; ISSN IETNAE
- Country of Publication:
- United States
- Language:
- English
Similar Records
Recent advances in understanding total-dose effects in bipolar transistors
Identification of degradation mechanisms in a bipolar linear voltage comparator through correlations of transistor and circuit response
Bounding the total-dose response of modern bipolar transistors
Journal Article
·
Sat Jun 01 00:00:00 EDT 1996
· IEEE Transactions on Nuclear Science
·
OSTI ID:277712
Identification of degradation mechanisms in a bipolar linear voltage comparator through correlations of transistor and circuit response
Journal Article
·
Tue Nov 30 23:00:00 EST 1999
· IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers)
·
OSTI ID:20014725
Bounding the total-dose response of modern bipolar transistors
Conference
·
Wed Nov 30 23:00:00 EST 1994
· IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)
·
OSTI ID:6762346