Identification of degradation mechanisms in a bipolar linear voltage comparator through correlations of transistor and circuit response
- and others
The input bias current (I{sub IB}) of the National LM111 voltage comparator exhibits a non-monotonic response to total dose irradiations at various dose rates. At low total doses, below 100 krad(SiO{sub 2}), increased I{sub IB} is due primarily to gain degradation in the circuit's input transistors. At high total doses, above 100 krad(SiO{sub 2}), I{sub IB} shows a downward trend that indicates the influence of compensating circuit mechanisms. Through correlation of transistor and circuit response, the transistors responsible for these compensating mechanisms are identified. Non-input transistors in the circuit's input stage lower the emitter-base operating point voltage of the input device. Lower emitter-base voltages reduce the base current supplied by the input transistors, causing a moderate recovery in the circuit response.
- Research Organization:
- Vanderbilt Univ., Nashville, TN (US)
- OSTI ID:
- 20014725
- Journal Information:
- IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers) Journal Issue: 6Pt1 Vol. 46; ISSN 0018-9499; ISSN IETNAE
- Country of Publication:
- United States
- Language:
- English
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