Photoluminescence of Be implanted Si-doped GaAs

Journal Article · Fri Nov 12 04:00:00 EST 1999 · Journal of Electronic Materials

DOI:https://doi.org/10.1007/s11664-999-0143-6· OSTI ID:20005404

Kroon, R E; Botha, J R; Neethling, J H; Drummond, T J

Degenerately doped n-type GaAs produces band-to-band luminescence with the peak energy dependent on the carrier concentration. In this study the photoluminescence of Si-doped GaAs is examined after implantation with high energy Be ions and annealing. The band-to-band peak energy in the unimplanted (reference) material is shown to be smaller than reported values in Te-doped GaAs of the same carrier concentration. This is attributed to compensation in the Si doped material as a result of its amphoteric nature. For the implanted samples, no luminescence was recorded for the unannealed samples or those annealed at 400 C and 500 C. Comparing the relative peak intensities from material annealed at 600 C for 15 min and 30 min indicates an increase in the number of As vacancies with anneal time. For samples annealed at 700 C and 800 C, the dominant luminescence is associated with Ga{sub As} antisite defects. It is suggested that formation of these defects occurs predominantly only at these higher temperatures. Crystal recovery as measured by the luminescence intensity increased with both anneal temperature and time. For the implanted sample annealed at 800 C for 15 min, the dominant peak height was 25% of that from the reference sample.

• Research Organization: Univ. of Port Elizabeth (ZA)
• OSTI ID: 20005404
• Journal Information: Journal of Electronic Materials, Journal Name: Journal of Electronic Materials Journal Issue: 12 Vol. 28; ISSN JECMA5; ISSN 0361-5235
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
BERYLLIUM ADDITIONS
DOPED MATERIALS
GALLIUM ARSENIDES
ION IMPLANTATION
PHOTOLUMINESCENCE
SILICON ADDITIONS