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Office of Scientific and Technical Information
 

Low-leakage regrown GaN p-n junctions for GaN power devices

Patent ·
OSTI ID:1998290
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Fabricating a regrown GaN p-n junction includes depositing a n-GaN layer on a substrate including n+-GaN, etching a surface of the n-GaN layer to yield an etched surface, depositing a p-GaN layer on the etched surface, etching a portion of the n-GaN layer and a portion of the p-GaN layer to yield a mesa opposite the substrate, and passivating a portion of the p-GaN layer around an edge of the mesa. The regrown GaN p-n junction is defined at an interface between the n-GaN layer and the p-GaN layer. The regrown GaN p-n junction includes a substrate, a n-GaN layer on the substrate having an etched surface, a p-GaN layer on the etched surface, a mesa defined by an etched portion of the n-GaN layer and an etched portion of the p-GaN layer, and a passivated portion of the p-GaN layer around an edge of the mesa.

Research Organization:
Arizona State Univ., Tempe, AZ (United States)
Sponsoring Organization:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
DOE Contract Number:
AR0000868
Assignee:
Arizona Board of Regents on behalf of Arizona State University (Scottsdale, AZ)
Patent Number(s):
11,626,483
Application Number:
17/031,342
OSTI ID:
1998290
Country of Publication:
United States
Language:
English

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