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GaN vertical-channel junction field-effect transistors with regrown p-GaN by metal organic chemical vapor deposition (MOCVD)

Patent ·
OSTI ID:1986791
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Fabricating a vertical-channel junction field-effect transistor includes forming an unintentionally doped GaN layer on a bulk GaN layer by metalorganic chemical vapor deposition, forming a Cr/SiO2 hard mask on the unintentionally doped GaN layer, patterning a fin by electron beam lithography, defining the Cr and SiO2 hard masks by reactive ion etching, improving a regrowth surface with inductively coupled plasma etching, removing hard mask residuals, regrowing a p-GaN layer, selectively etching the p-GaN layer, forming gate electrodes by electron beam evaporation, and forming source and drain electrodes by electron beam evaporation. The resulting vertical-channel junction field-effect transistor includes a doped GaN layer, an unintentionally doped GaN layer on the doped GaN layer, and a p-GaN regrowth layer on the unintentionally doped GaN layer. Portions of the p-GaN regrowth layer are separated by a vertical channel of the unintentionally doped GaN layer.

Research Organization:
Arizona State University, Tempe, AZ (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AR0000868
Assignee:
Arizona Board of Regents on Behalf of Arizona State University (Scottsdale, AZ)
Patent Number(s):
11,495,694
Application Number:
17/372,810
OSTI ID:
1986791
Country of Publication:
United States
Language:
English

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  • Yoshino, Michitaka; Sugamata, Kota; Ikeda, Kiyoji
  • Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 449 https://doi.org/10.1016/j.nimb.2019.04.008
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