Skip to main content
OSTI.GOVU.S. Department of Energy Office of Scientific and Technical Information
U.S. Department of Energy
Office of Scientific and Technical Information
 

Post-Deposition Recrystallization of Chloride Treated Cu(InxGa(1-x))Se2 Thin-Film Solar Cells

Journal Article · · Conference Record of the IEEE Photovoltaic Specialists Conference
 [1];  [2];  [2];  [3];  [3];  [3];  [3]
  1. Colorado School of Mines, Golden, CO (United States); Colorado School of Mines
  2. Colorado School of Mines, Golden, CO (United States)
  3. Old Dominion University, Norfolk, VA (United States)
+ Show Author Affiliations
Conditions promoting the recrystallization of CuIn(1-x)Se2 (CIGS) deposited by co-evaporation at 350°C were studied. Cu-rich and Cu-poor CIGS samples were annealed at 400°C and 550°C for 1 hour in the presence of alkali halide, In3Cl, Cu2Cl, SeCl4, and Se vapors. Increases in grain size of greater than 10× were observed with In3Cl with Se, Cu2Cl with and without Se, and SeCl4 at 550°C. Smaller magnitude grain size increases resulted at 400°C. Film composition was influenced by the vapors present with In3Cl enhancing the In content and Cu2Cl enhancing the Cu content. Furthermore, based on XRD analysis, the In3Cl+Se treatment best preserves the CIGS structure while resulting in a large amount of grain growth.
Research Organization:
Colorado School of Mines, Golden, CO (United States)
Sponsoring Organization:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
Grant/Contract Number:
EE0007551
OSTI ID:
1991326
Journal Information:
Conference Record of the IEEE Photovoltaic Specialists Conference, Journal Name: Conference Record of the IEEE Photovoltaic Specialists Conference Vol. 2018; ISSN 0160-8371
Publisher:
IEEECopyright Statement
Country of Publication:
United States
Language:
English

References (4)

Recrystallization and sulfur diffusion in CdCl2-treated CdTe/CdS thin films journal July 1997
Processing options for CdTe thin film solar cells journal December 2004
Effect of substrate temperature on the structural and electrical properties of CIGS films based on the one-stage co-evaporation process journal April 2010
In-situ annealing of Cu(In,Ga)Se2 films grown by elemental co-evaporation conference May 2008

Similar Records

Post-Deposition Recrystallization of Co-Evaporated CuInxGa(1-x)Se2 Films by Bromide Vapor Treatments
Journal Article · Sat Jun 01 00:00:00 EDT 2019 · Conference Record of the IEEE Photovoltaic Specialists Conference · OSTI ID:1991325
Study of Indium Chloride Vapor Treatment on Cu(In,Ga)Se2 Semiconductor Thin Films
Journal Article · Sun Jun 20 00:00:00 EDT 2021 · Conference Record of the IEEE Photovoltaic Specialists Conference · OSTI ID:1991388
Vapor Treatment and In-situ Recrystallization by Copper Chloride on Cu(In,Ga)Se2 Thin Film
Journal Article · Sun Jun 20 00:00:00 EDT 2021 · Conference Record of the IEEE Photovoltaic Specialists Conference · OSTI ID:1991383

Related Subjects

14 SOLAR ENERGY
CIGS
photovoltaic cells
recrystallization
thin-film annealing