Vapor Treatment and In-situ Recrystallization by Copper Chloride on Cu(In,Ga)Se2 Thin Film
Journal Article
·
· Conference Record of the IEEE Photovoltaic Specialists Conference
- Old Dominion University, Norfolk, VA (United States); Colorado School of Mines
- Old Dominion University, Norfolk, VA (United States)
- Colorado School of Mines, Golden, CO (United States)
- Universite de Nantes (France)
Deposition of CIGS semiconductor thin films was performed at low temperature and high rate by three-stage coevaporation process on molybdenum coated glass substrate. Here, a vapor treatment was done in between the second and third stage by flashing CuCl2 for 5 mins at 400 °C. A large change in morphology and crystal structure was observed after the treatment. XRD and SEM showed that small grains transformed into large grains. A smoother Ga profile was observed by SIMS measurements for the treated films as compared to as-deposited films. Furthermore, the Na profile was also modified in the recrystallized samples, with a lower content after recrystallization.
- Research Organization:
- Colorado School of Mines, Golden, CO (United States)
- Sponsoring Organization:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
- Grant/Contract Number:
- EE0007551
- OSTI ID:
- 1991383
- Journal Information:
- Conference Record of the IEEE Photovoltaic Specialists Conference, Journal Name: Conference Record of the IEEE Photovoltaic Specialists Conference Vol. 2021; ISSN 0160-8371
- Publisher:
- IEEECopyright Statement
- Country of Publication:
- United States
- Language:
- English
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