Post-Deposition Recrystallization of Co-Evaporated CuIn_xGa_(1-x)Se₂ Films by Bromide Vapor Treatments

Journal Article · Sat Jun 01 00:00:00 EDT 2019 · Conference Record of the IEEE Photovoltaic Specialists Conference

DOI:https://doi.org/10.1109/pvsc40753.2019.8980803· OSTI ID:1991325

Palmiotti, Elizabeth ^[1]; Karki, Shankar ^[2]; Belfore, Ben ^[2]; Soltanmohammad, Sina ^[3]; Rajan, Grace ^[2]; Marsillac, Sylvain ^[2]; Rockett, Angus ^[3]

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1. Colorado School of Mines, Golden, CO (United States); Colorado School of Mines
2. Old Dominion University, Norfolk, VA (United States)
3. Colorado School of Mines, Golden, CO (United States)

CIGS films deposited at 400°C onto molybdenum-coated soda-lime glass substrates by co-evaporation were annealed in InBr₃ vapors or CuBr with Se vapors. The treatments were conducted at 400°C, 450°C, or 500°C for one hour. The InBr₃ treatments above 400°C and CuBr with Se treatments at 500°C resulted in increased grain size, improved crystallinity, and a decrease in Cu₂Se phase. Annealed samples also exhibited large surface facets. CIGS films deposited at 350°C were also investigated in InBr₃ and CuBr with Se vapors at 450°C for one hour. Furthermore, these treatments resulted in increased grain size and less deviations from the as-deposited composition.

• Research Organization: Colorado School of Mines, Golden, CO (United States)
• Sponsoring Organization: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
• Grant/Contract Number: EE0007551
• OSTI ID: 1991325
• Journal Information: Conference Record of the IEEE Photovoltaic Specialists Conference, Journal Name: Conference Record of the IEEE Photovoltaic Specialists Conference Vol. 2019; ISSN 0160-8371
• Publisher: IEEE
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
CIGS
annealing
photovoltaic cells
recrystallization