Evidence of hexagonal germanium grains on annealed monolayer MoS2

Wang, Xuejing; Kaufmann, Ryan; Jones, Andrew C.; Chen, Renjie; Ahmed, Towfiq; Pettes, Michael T.; Kotula, Paul G.; Bilgin, Ismail; Kar, Swastik; Yoo, Jinkyoung

doi:10.1016/j.mtadv.2023.100401

Title: Evidence of hexagonal germanium grains on annealed monolayer MoS₂

Journal Article · Wed Jul 05 00:00:00 EDT 2023 · Materials Today Advances

DOI:https://doi.org/10.1016/j.mtadv.2023.100401· OSTI ID:1989249

Wang, Xuejing ^[1]; Kaufmann, Ryan ^[2]; Jones, Andrew C. ^[1]; Chen, Renjie ^[3]; Ahmed, Towfiq ^[4]; Pettes, Michael T. ^[1]; Kotula, Paul G. ^[5]; Bilgin, Ismail ^[6]; Kar, Swastik ^[7];

^[1]

Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
University of British Columbia, Vancouver, BC (Canada)
University of California, San Diego, CA (United States)
Pacific Northwest National Laboratory (PNNL), Richland, WA (United States)
Sandia National Laboratory (SNL-NM), Albuquerque, NM (United States)
Ludwig Maximilian University of Munich, Munich (Germany)
Northeastern University, Boston, MA (United States)

Growing three-dimensional (3D) materials on two-dimensional (2D) van der Waals surface has shown its effectiveness in overcoming materials incompatibility for stacking transferrable membranes toward advanced device manufacturing. Herein, we demonstrate that the nucleation of hexagonal germanium (Ge) grains within a continuous crystalline film, which has been unfeasible through traditional epitaxy techniques, is realized by chemical vapor deposition on top of n-type monolayer molybdenum disulfide (MoS₂) substrates. Suggested by quantum molecular dynamics calculation, the hexagonal Ge nucleation is thermodynamically preferable to cubic Ge when growing on monolayer MoS₂ with sulfur vacancies. The strained hexagonal Ge grains have been confirmed by transmission electron microscopy analyses from both real space and reciprocal space. Scanning probe microscopy shows that the hexagonal Ge film possesses higher reflectivity in infrared spectral range, implying a higher carrier concentration resulted from the narrower band gap, as compared to cubic Ge.

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Research Organization:: Los Alamos National Laboratory (LANL), Los Alamos, NM (United States); Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: 89233218CNA000001; 20170121 ER; 20210782 ER; 20210640ECR; NA-0003525; NA0003525

OSTI ID:: 1989249

Alternate ID(s):: OSTI ID: 1993225

Report Number(s):: LA-UR-22-23843; S2590049823000619; 100401; PII: S2590049823000619

Journal Information:: Materials Today Advances, Journal Name: Materials Today Advances Vol. 19 Journal Issue: C; ISSN 2590-0498

Publisher:: ElsevierCopyright Statement

Country of Publication:: United Kingdom

Language:: English

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Related Subjects

36 MATERIALS SCIENCE
Material science
Hexagonal germanium
Van der waals epitaxy
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Transition metal dichalcogenides
Grain boundary
Strain

Title: Evidence of hexagonal germanium grains on annealed monolayer MoS2

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Title: Evidence of hexagonal germanium grains on annealed monolayer MoS₂