Molecular Beam Epitaxy of Highly Crystalline Monolayer Molybdenum Disulfide on Hexagonal Boron Nitride

Fu, Deyi; Zhao, Xiaoxu; Zhang, Yu-Yang; Li, Linjun; Xu, Hai; Jang, A-Rang; Yoon, Seong In; Song, Peng; Poh, Sock Mui; Ren, Tianhua; Ding, Zijing; Fu, Wei; Shin, Tae Joo; Shin, Hyeon Suk; Pantelides, Sokrates T.; Zhou, Wu; Loh, Kian Ping

doi:10.1021/jacs.7b05131

Molecular Beam Epitaxy of Highly Crystalline Monolayer Molybdenum Disulfide on Hexagonal Boron Nitride

Journal Article · Wed Jun 21 04:00:00 EDT 2017 · Journal of the American Chemical Society

DOI:https://doi.org/10.1021/jacs.7b05131· OSTI ID:1597829

^[1]; Zhao, Xiaoxu ^[2]; ^[3]; Li, Linjun ^[2]; Xu, Hai ^[2]; Jang, A-Rang ^[4]; Yoon, Seong In ^[4]; Song, Peng ^[2]; Poh, Sock Mui ^[2]; Ren, Tianhua ^[2]; Ding, Zijing ^[2]; Fu, Wei ^[2]; Shin, Tae Joo ^[4]; ^[4]; Pantelides, Sokrates T. ^[5]; Zhou, Wu ^[6]; ^[7]

National Research Foundation (Singapore); National Univ. of Singapore (Singapore); Vanderbilt University
National Univ. of Singapore (Singapore)
University of Chinese Academy of Sciences, Beijing (China); Vanderbilt Univ., Nashville, TN (United States)
Ulsan National Institute of Science and Technology (UNIST), Ulsan (Korea, Republic of)
Vanderbilt Univ., Nashville, TN (United States)
University of Chinese Academy of Sciences, Beijing (China); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
National Research Foundation (Singapore); National Univ. of Singapore (Singapore)

Atomically thin molybdenum disulfide (MoS₂), a direct-band-gap semiconductor, is promising for applications in electronics and optoelectronics, but the scalable synthesis of highly crystalline film remains challenging. Here we report the successful epitaxial growth of a continuous, uniform, highly crystalline monolayer MoS₂ film on hexagonal boron nitride (h-BN) by molecular beam epitaxy. Atomic force microscopy and electron microscopy studies reveal that MoS₂ grown on h-BN primarily consists of two types of nucleation grains (0° aligned and 60° antialigned domains). By adopting a high growth temperature and ultralow precursor flux, the formation of 60° antialigned grains is largely suppressed. Further, the resulting perfectly aligned grains merge seamlessly into a highly crystalline film. Large-scale monolayer MoS₂ film can be grown on a 2 in. h-BN/sapphire wafer, for which surface morphology and Raman mapping confirm good spatial uniformity. Our study represents a significant step in the scalable synthesis of highly crystalline MoS₂ films on atomically flat surfaces and paves the way to large-scale applications.

Research Organization:: Vanderbilt Univ., Nashville, TN (United States)

Sponsoring Organization:: National Research Foundation; Singapore National Research Foundation (NRF); Chinese Academy of Science (CAS); McMinn Endowment; USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division (MSE); Ministry of Science, ICT and Future Planning (MSIT)

DOE Contract Number:: FG02-09ER46554

OSTI ID:: 1597829

Journal Information:: Journal of the American Chemical Society, Journal Name: Journal of the American Chemical Society Journal Issue: 27 Vol. 139; ISSN 0002-7863

Publisher:: American Chemical Society (ACS)

Country of Publication:: United States

Language:: English

References (43)

Vapour phase growth and grain boundary structure of molybdenum disulphide atomic layers Najmaei, Sina; Liu, Zheng; Zhou, Wu Nature Materials, Vol. 12, Issue 8, p. 754-759 https://doi.org/10.1038/nmat3673	journal	June 2013
Wafer-Scale and Wrinkle-Free Epitaxial Growth of Single-Orientated Multilayer Hexagonal Boron Nitride on Sapphire Jang, A-Rang; Hong, Seokmo; Hyun, Chohee Nano Letters, Vol. 16, Issue 5 https://doi.org/10.1021/acs.nanolett.6b01051	journal	April 2016
Mobility engineering and a metal–insulator transition in monolayer MoS2 Radisavljevic, Branimir; Kis, Andras Nature Materials, Vol. 12, Issue 9 https://doi.org/10.1038/nmat3687	journal	June 2013
Observation of piezoelectricity in free-standing monolayer MoS2 Zhu, Hanyu; Wang, Yuan; Xiao, Jun Nature Nanotechnology, Vol. 10, Issue 2 https://doi.org/10.1038/nnano.2014.309	journal	December 2014
Flexible metallic nanowires with self-adaptive contacts to semiconducting transition-metal dichalcogenide monolayers Lin, Junhao; Cretu, Ovidiu; Zhou, Wu Nature Nanotechnology, Vol. 9, Issue 6 https://doi.org/10.1038/nnano.2014.81	journal	April 2014
Single-layer MoS₂ transistors Radisavljevic, B.; Radenovic, A.; Brivio, J. Nature Nanotechnology, Vol. 6, Issue 3, p. 147-150 https://doi.org/10.1038/nnano.2010.279	journal	January 2011
The valley Hall effect in MoS2 transistors Mak, K. F.; McGill, K. L.; Park, J. Science, Vol. 344, Issue 6191 https://doi.org/10.1126/science.1250140	journal	June 2014
Origin of Improved Optical Quality of Monolayer Molybdenum Disulfide Grown on Hexagonal Boron Nitride Substrate Wan, Yi; Zhang, Hui; Wang, Wei Small, Vol. 12, Issue 2 https://doi.org/10.1002/smll.201502141	journal	November 2015
Piezoelectricity of single-atomic-layer MoS2 for energy conversion and piezotronics Wu, Wenzhuo; Wang, Lei; Li, Yilei Nature, Vol. 514, Issue 7523 https://doi.org/10.1038/nature13792	journal	October 2014
Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide van der Zande, Arend M.; Huang, Pinshane Y.; Chenet, Daniel A. Nature Materials, Vol. 12, Issue 6, p. 554-561 https://doi.org/10.1038/nmat3633	journal	May 2013
Precisely Aligned Monolayer MoS ₂ Epitaxially Grown on h-BN basal Plane Yu, Hua; Yang, Zhengzhong; Du, Luojun Small, Vol. 13, Issue 7 https://doi.org/10.1002/smll.201603005	journal	December 2016
Synthesis of Large-Area MoS₂ Atomic Layers with Chemical Vapor Deposition Lee, Yi-Hsien; Zhang, Xin-Quan; Zhang, Wenjing Advanced Materials, Vol. 24, Issue 17, p. 2320-2325 https://doi.org/10.1002/adma.201104798	journal	March 2012
Direct observation of the transition from indirect to direct bandgap in atomically thin epitaxial MoSe2 Zhang, Yi; Chang, Tay-Rong; Zhou, Bo Nature Nanotechnology, Vol. 9, Issue 2 https://doi.org/10.1038/nnano.2013.277	journal	December 2013
Structural and electronic properties of h -BN Liu, Lei; Feng, Y. P.; Shen, Z. X. Physical Review B, Vol. 68, Issue 10 https://doi.org/10.1103/PhysRevB.68.104102	journal	September 2003
Direct Growth of Single- and Few-Layer MoS ₂ on h-BN with Preferred Relative Rotation Angles Yan, Aiming; Velasco, Jairo; Kahn, Salman Nano Letters, Vol. 15, Issue 10 https://doi.org/10.1021/acs.nanolett.5b01311	journal	September 2015
Epitaxial Monolayer MoS ₂ on Mica with Novel Photoluminescence Ji, Qingqing; Zhang, Yanfeng; Gao, Teng Nano Letters, Vol. 13, Issue 8 https://doi.org/10.1021/nl401938t	journal	July 2013
Valley polarization in MoS2 monolayers by optical pumping Zeng, Hualing; Dai, Junfeng; Yao, Wang Nature Nanotechnology, Vol. 7, Issue 8 https://doi.org/10.1038/nnano.2012.95	journal	June 2012
Gate-tunable memristive phenomena mediated by grain boundaries in single-layer MoS2 Sangwan, Vinod K.; Jariwala, Deep; Kim, In Soo Nature Nanotechnology, Vol. 10, Issue 5 https://doi.org/10.1038/nnano.2015.56	journal	April 2015
Direct Growth of MoS ₂ /h-BN Heterostructures via a Sulfide-Resistant Alloy Fu, Lei; Sun, Yangyong; Wu, Nian ACS Nano, Vol. 10, Issue 2 https://doi.org/10.1021/acsnano.5b06254	journal	January 2016
Phonon-limited mobility in n -type single-layer MoS 2 from first principles Kaasbjerg, Kristen; Thygesen, Kristian S.; Jacobsen, Karsten W. Physical Review B, Vol. 85, Issue 11 https://doi.org/10.1103/PhysRevB.85.115317	journal	March 2012
Quasiparticle band structures and optical properties of strained monolayer MoS 2 and WS 2 Shi, Hongliang; Pan, Hui; Zhang, Yong-Wei Physical Review B, Vol. 87, Issue 15 https://doi.org/10.1103/PhysRevB.87.155304	journal	April 2013
Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform Cui, Xu; Lee, Gwan-Hyoung; Kim, Young Duck Nature Nanotechnology, Vol. 10, Issue 6 https://doi.org/10.1038/nnano.2015.70	journal	April 2015
Intrinsic Electronic Transport Properties of High-Quality Monolayer and Bilayer MoS ₂ Baugher, Britton W. H.; Churchill, Hugh O. H.; Yang, Yafang Nano Letters, Vol. 13, Issue 9 https://doi.org/10.1021/nl401916s	journal	August 2013
Oxygen-Assisted Chemical Vapor Deposition Growth of Large Single-Crystal and High-Quality Monolayer MoS ₂ Chen, Wei; Zhao, Jing; Zhang, Jing Journal of the American Chemical Society, Vol. 137, Issue 50 https://doi.org/10.1021/jacs.5b10519	journal	December 2015
Atomically Thin MoS2 A New Direct-Gap Semiconductor Mak, Kin Fai; Lee, Changgu; Hone, James Physical Review Letters, Vol. 105, Issue 13, Article No.136805 https://doi.org/10.1103/PhysRevLett.105.136805	journal	September 2010
Electrical Transport Properties of Polycrystalline Monolayer Molybdenum Disulfide Najmaei, Sina; Amani, Matin; Chin, Matthew L. ACS Nano, Vol. 8, Issue 8 https://doi.org/10.1021/nn501701a	journal	July 2014
Quantitative measurement of displacement and strain fields from HREM micrographs Hÿtch, M. J.; Snoeck, E.; Kilaas, R. Ultramicroscopy, Vol. 74, Issue 3, p. 131-146 https://doi.org/10.1016/S0304-3991(98)00035-7	journal	August 1998
Chemical Vapor Deposition of High-Quality Large-Sized MoS ₂ Crystals on Silicon Dioxide Substrates Chen, Jianyi; Tang, Wei; Tian, Bingbing Advanced Science, Vol. 3, Issue 8 https://doi.org/10.1002/advs.201600033	journal	March 2016
Giant bandgap renormalization and excitonic effects in a monolayer transition metal dichalcogenide semiconductor Ugeda, Miguel M.; Bradley, Aaron J.; Shi, Su-Fei Nature Materials, Vol. 13, Issue 12 https://doi.org/10.1038/nmat4061	journal	August 2014
All Chemical Vapor Deposition Growth of MoS ₂ :h-BN Vertical van der Waals Heterostructures Wang, Shanshan; Wang, Xiaochen; Warner, Jamie H. ACS Nano, Vol. 9, Issue 5 https://doi.org/10.1021/acsnano.5b00655	journal	April 2015
High yield exfoliation of two-dimensional chalcogenides using sodium naphthalenide Zheng, Jian; Zhang, Han; Dong, Shaohua Nature Communications, Vol. 5, Issue 1, Article No. 2995 https://doi.org/10.1038/ncomms3995	journal	January 2014
One-Dimensional Electrical Contact to a Two-Dimensional Material Wang, L.; Meric, I.; Huang, P. Y. Science, Vol. 342, Issue 6158 https://doi.org/10.1126/science.1244358	journal	October 2013
Synthesis of large-area multilayer hexagonal boron nitride for high material performance Kim, Soo Min; Hsu, Allen; Park, Min Ho Nature Communications, Vol. 6, Issue 1 https://doi.org/10.1038/ncomms9662	journal	October 2015
Large-Area Epitaxial Monolayer MoS ₂ Dumcenco, Dumitru; Ovchinnikov, Dmitry; Marinov, Kolyo ACS Nano, Vol. 9, Issue 4 https://doi.org/10.1021/acsnano.5b01281	journal	February 2015
Emerging Photoluminescence in Monolayer MoS₂ Splendiani, Andrea; Sun, Liang; Zhang, Yuanbo Nano Letters, Vol. 10, Issue 4, p. 1271-1275 https://doi.org/10.1021/nl903868w	journal	April 2010
Growth of Large-Area and Highly Crystalline MoS₂ Thin Layers on Insulating Substrates Liu, Keng-Ku; Zhang, Wenjing; Lee, Yi-Hsien Nano Letters, Vol. 12, Issue 3, p. 1538-1544 https://doi.org/10.1021/nl2043612	journal	February 2012
Reliable Exfoliation of Large-Area High-Quality Flakes of Graphene and Other Two-Dimensional Materials Huang, Yuan; Sutter, Eli; Shi, Norman N. ACS Nano, Vol. 9, Issue 11 https://doi.org/10.1021/acsnano.5b04258	journal	September 2015
Intrinsic Structural Defects in Monolayer Molybdenum Disulfide Zhou, Wu; Zou, Xiaolong; Najmaei, Sina Nano Letters, Vol. 13, Issue 6, p. 2615-2622 https://doi.org/10.1021/nl4007479	journal	May 2013
Metallic High-Angle Grain Boundaries in Monolayer Polycrystalline WS ₂ Zou, Xiaolong; Yakobson, Boris I. Small, Vol. 11, Issue 35 https://doi.org/10.1002/smll.201500811	journal	June 2015
High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity Kang, Kibum; Xie, Saien; Huang, Lujie Nature, Vol. 520, Issue 7549 https://doi.org/10.1038/nature14417	journal	April 2015
From Bulk to Monolayer MoS2: Evolution of Raman Scattering Li, Hong; Zhang, Qing; Yap, Chin Chong Ray Advanced Functional Materials, Vol. 22, Issue 7 https://doi.org/10.1002/adfm.201102111	journal	January 2012
Molecular beam epitaxy growth of high quality p-doped SnS van der Waals epitaxy on a graphene buffer layer Wang, W.; Leung, K. K.; Fong, W. K. Journal of Applied Physics, Vol. 111, Issue 9 https://doi.org/10.1063/1.4709732	journal	May 2012
Ultrasensitive photodetectors based on monolayer MoS2 Lopez-Sanchez, Oriol; Lembke, Dominik; Kayci, Metin Nature Nanotechnology, Vol. 8, Issue 7 https://doi.org/10.1038/nnano.2013.100	journal	June 2013

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