Metalorganic chemical vapor deposition-regrown Ga-rich InGaP films on SiGe virtual substrates for Si-based III-V optoelectronic device applications

Kim, TaeWan; Wang, Bing; Wang, Cong; Kohen, David A.; Hwang, Jeong Woo; Shin, Jae Cheol; Kang, Sang-Woo; Michel, Jürgen

doi:10.1116/1.4979272

Metalorganic chemical vapor deposition-regrown Ga-rich InGaP films on SiGe virtual substrates for Si-based III-V optoelectronic device applications

Journal Article · Fri Mar 24 00:00:00 EDT 2017 · Journal of Vacuum Science and Technology A

DOI:https://doi.org/10.1116/1.4979272· OSTI ID:1987435

Kim, TaeWan; Wang, Bing; Wang, Cong; Kohen, David A.; Hwang, Jeong Woo; Shin, Jae Cheol; Kang, Sang-Woo; Michel, Jürgen

Ga-rich InGaP materials are attractive applications for yellow-green spectral range optoelectronics such as light-emitting diodes and solar cells on silicon substrate. Bulk, Ga-rich InGaP films grown by metalorganic chemical vapor deposition on SiGe virtual substrates were investigated in the V/III compositional ratio range of 44.3–402 using chamber pressures from 100 to 200 mbar. These films were nominally lattice matched to the SiGe virtual substrate with a bandgap energy of 2.07–2.09 eV at low temperature (10 K). The authors show that the surface morphology of the Ga-rich InGaP films was dependent on the growth conditions, including the V/III gas phase ratio, pressure, and growth rate. By optimizing the growth conditions, the authors achieved improved surface morphologies of the Ga-rich InGaP films. The hillock density of the films produced using a V/III gas phase ratio of 44.3 and 75.4, a growth pressure of 100 mbar, and a growth rate of 0.9 μm/h was about an order of magnitude lower (30.3–50 × 104 cm−2) than that observed using higher V/III gas phase ratios such as 201 and 402. An increase in luminescence efficiency of Ga-rich InGaP materials was observed when the hillock density is lower. The authors discuss the mechanisms of the hillock formation.

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Sponsoring Organization:: USDOE Advanced Research Projects Agency - Energy (ARPA-E)

OSTI ID:: 1987435

Journal Information:: Journal of Vacuum Science and Technology A, Journal Name: Journal of Vacuum Science and Technology A Journal Issue: 3 Vol. 35; ISSN 0734-2101

Publisher:: American Vacuum SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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