Plasma chemistry dependent ECR etching of GaN
- and others
Electron cyclotron resonance (ECR) etching of GaN in Cl{sub 2}/H{sub 2}/Ar, C1{sub 2}/SF{sub 6}/Ar, BCl{sub 3}/H{sub 2}/Ar and BCl{sub 3}/SF{sub 6}/Ar plasmas is reported as a function of percent H{sub 2} and SF{sub 6}. GaN etch rates were found to be 2 to 3 times greater in Cl{sub 2}/H{sub 2}/Ar discharges than in BCl{sub 3}/H{sub 2}/Ar discharges independent of the H{sub 2} concentration. In both discharges, the etch rates decreased as the H{sub 2} concentration increased above 10%. When SF{sub 6} was substituted for H{sub 2}, the GaN etch rates in BCl{sub 3}-based plasmas were greater than those for the Cl{sub 2}-based discharges as the SF{sub 6} concentration increased. GaN etch rates were greater in Cl{sub 2}/H{sub 2}/Ar discharges as compared to Cl{sub 2}SF{sub 6}/Ar discharges whereas the opposite trend was observed for BCl{sub 3}-based discharges. Variations in surface morphology and near-surface stoichiometry due to plasma chemistries were also investigated using atomic force microscopy and Auger spectroscopy, respectively.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 198675
- Report Number(s):
- SAND--95-2737C; CONF-951155--20; ON: DE96003701
- Country of Publication:
- United States
- Language:
- English
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