Selective inductively coupled plasma etching of group-III nitrides in Cl{sub 2}- and BCl{sub 3}-based plasmas
- Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
- Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States)
- Department of Electrical Engineering, University of New Mexico, Albuquerque, New Mexico 87131 (United States)
High-density plasma etching has been an effective patterning technique for the group-III nitrides due to ion fluxes which are two to four orders of magnitude higher than more conventional reactive ion etch systems. GaN etch rates exceeding 0.5 {mu}m/min have been reported in inductively coupled plasma (ICP) etch systems at relatively high dc-biases ({gt}200 V). However, under these conditions, the etch mechanism is dominated by ion bombardment energies which can induce damage and minimize etch selectivity. Development of etch processes with high selectivity has become relevant with recent interest in high power, high temperature electronic devices. In this study, we report ICP etch rates and selectivities for GaN, AlN, and InN in Cl{sub 2}/Ar, Cl{sub 2}/N{sub 2}, Cl{sub 2}/H{sub 2}, Cl{sub 2}/SF{sub 6}, BCl{sub 3}/Ar, BCl{sub 3}/H{sub 2}, BCl{sub 3}/N{sub 2}, and BCl{sub 3}/SF{sub 6} plasma chemistries. {copyright} {ital 1998 American Vacuum Society.}
- OSTI ID:
- 342640
- Report Number(s):
- CONF-971029--
- Journal Information:
- Journal of Vacuum Science and Technology, A, Journal Name: Journal of Vacuum Science and Technology, A Journal Issue: 3 Vol. 16; ISSN 0734-2101; ISSN JVTAD6
- Country of Publication:
- United States
- Language:
- English
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