Thin-film GaN Schottky diodes formed by epitaxial lift-off

Wang, Jingshan; Youtsey, Chris; McCarthy, Robert; Reddy, Rekha; Allen, Noah; Guido, Louis; Xie, Jinqiao; Beam, Edward; Fay, Patrick

doi:10.1063/1.4982250

Thin-film GaN Schottky diodes formed by epitaxial lift-off

Journal Article · Mon Apr 24 00:00:00 EDT 2017 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4982250· OSTI ID:1985524

Wang, Jingshan; Youtsey, Chris; McCarthy, Robert; Reddy, Rekha; Allen, Noah; Guido, Louis; Xie, Jinqiao; Beam, Edward;

The performance of thin-film GaN Schottky diodes fabricated using a large-area epitaxial lift-off (ELO) process is reported in this work. Comparison of the device characteristics before and after lift-off processing reveals that the Schottky barrier height remains unchanged by the liftoff processing and is consistent with expectations based on metal-semiconductor work function differences, with a barrier height of approximately 1 eV obtained for Ni/Au contacts on n− GaN. However, the leakage current in both reverse and low-forward-bias regimes is found to improve significantly after ELO processing. Likewise, the ideality factor of the Schottky diodes also improves after ELO processing, decreasing from n = 1.12–1.18 before ELO to n = 1.04–1.10 after ELO. A possible explanation for the performance improvement obtained for Schottky diodes after substrate removal by ELO processing is the elimination of leakage paths consisting of vertical leakage along threading dislocations coupled with lateral conduction through the underlying n+ buffer layer that is removed in the ELO process. Epitaxial liftoff with GaN may enable significant improvement in device performance and economics for GaN-based electronics and optoelectronics.

View Accepted Manuscript (Publisher)

Sponsoring Organization:: USDOE Advanced Research Projects Agency - Energy (ARPA-E)

Grant/Contract Number:: AR0000446

OSTI ID:: 1985524

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 17 Vol. 110; ISSN 0003-6951

Publisher:: American Institute of PhysicsCopyright Statement

Country of Publication:: United States

Language:: English

References (28)

GaN HEMT thermal behavior and implications for reliability testing and analysis Green, Daniel S.; Vembu, Bharath; Hepper, David physica status solidi (c), Vol. 5, Issue 6 https://doi.org/10.1002/pssc.200778722	journal	May 2008
Wide Bandgap III-Nitride Nanomembranes for Optoelectronic Applications Park, Sung Hyun; Yuan, Ge; Chen, Danti Nano Letters, Vol. 14, Issue 8 https://doi.org/10.1021/nl5009629	journal	July 2014
Graphene quilts for thermal management of high-power GaN transistors Yan, Zhong; Liu, Guanxiong; Khan, Javed M. Nature Communications, Vol. 3, Issue 1 https://doi.org/10.1038/ncomms1828	journal	January 2012
Thermal stability of W and WSix contacts on p-GaN Cao, X. A.; Pearton, S. J.; Ren, F. Applied Physics Letters, Vol. 73, Issue 7 https://doi.org/10.1063/1.122046	journal	August 1998
GaN avalanche photodiodes Carrano, J. C.; Lambert, D. J. H.; Eiting, C. J. Applied Physics Letters, Vol. 76, Issue 7 https://doi.org/10.1063/1.125631	journal	February 2000
Development of selective lateral photoelectrochemical etching of InGaN/GaN for lift-off applications Stonas, A. R.; Margalith, T.; DenBaars, S. P. Applied Physics Letters, Vol. 78, Issue 13 https://doi.org/10.1063/1.1352663	journal	March 2001
Inhomogeneous spatial distribution of reverse bias leakage in GaN Schottky diodes Hsu, J. W. P.; Manfra, M. J.; Lang, D. V. Applied Physics Letters, Vol. 78, Issue 12 https://doi.org/10.1063/1.1356450	journal	March 2001
Vertical and lateral GaN rectifiers on free-standing GaN substrates Zhang, A. P.; Johnson, J. W.; Luo, B. Applied Physics Letters, Vol. 79, Issue 10 https://doi.org/10.1063/1.1400771	journal	September 2001
Growth of GaN films on porous SiC substrate by molecular-beam epitaxy Yun, F.; Reshchikov, M. A.; He, L. Applied Physics Letters, Vol. 81, Issue 22 https://doi.org/10.1063/1.1524304	journal	November 2002
Thermal stability of WSix and W Schottky contacts on n-GaN Kim, Jihyun; Ren, F.; Baca, A. G. Applied Physics Letters, Vol. 82, Issue 19 https://doi.org/10.1063/1.1576506	journal	May 2003
Correlated scanning Kelvin probe and conductive atomic force microscopy studies of dislocations in gallium nitride Simpkins, B. S.; Yu, E. T.; Waltereit, P. Journal of Applied Physics, Vol. 94, Issue 3 https://doi.org/10.1063/1.1586952	journal	August 2003
Experimental analysis and theoretical model for anomalously high ideality factors (n≫2.0) in AlGaN/GaN p-n junction diodes Shah, Jay M.; Li, Y. -L.; Gessmann, Th. Journal of Applied Physics, Vol. 94, Issue 4 https://doi.org/10.1063/1.1593218	journal	August 2003
Deep traps responsible for hysteresis in capacitance-voltage characteristics of AlGaN∕GaN heterostructure transistors Polyakov, A. Y.; Smirnov, N. B.; Govorkov, A. V. Applied Physics Letters, Vol. 91, Issue 23 https://doi.org/10.1063/1.2823607	journal	December 2007
A modified forward I ‐ V plot for Schottky diodes with high series resistance Norde, H. Journal of Applied Physics, Vol. 50, Issue 7 https://doi.org/10.1063/1.325607	journal	July 1979
Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies Morkoç, H.; Strite, S.; Gao, G. B. Journal of Applied Physics, Vol. 76, Issue 3 https://doi.org/10.1063/1.358463	journal	August 1994
Schottky contact and the thermal stability of Ni on n ‐type GaN Guo, J. D.; Pan, F. M.; Feng, M. S. Journal of Applied Physics, Vol. 80, Issue 3 https://doi.org/10.1063/1.363822	journal	August 1996
Wafer-scale epitaxial lift-off of optoelectronic grade GaN from a GaN substrate using a sacrificial ZnO interlayer Rajan, Akhil; Rogers, David J.; Ton-That, Cuong Journal of Physics D: Applied Physics, Vol. 49, Issue 31 https://doi.org/10.1088/0022-3727/49/31/315105	journal	July 2016
Schottky barrier properties of various metals on n-type GaN Schmitz, A. C.; Ping, A. T.; Khan, M. Asif Semiconductor Science and Technology, Vol. 11, Issue 10 https://doi.org/10.1088/0268-1242/11/10/002	journal	October 1996
Study of leakage defects on GaN films by conductive atomic force microscopy Moore, J. C.; Ortiz, J. E.; Xie, J. Journal of Physics: Conference Series, Vol. 61 https://doi.org/10.1088/1742-6596/61/1/019	journal	March 2007
The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs Green, B. M.; Chu, K. K.; Chumbes, E. M. IEEE Electron Device Letters, Vol. 21, Issue 6 https://doi.org/10.1109/55.843146	journal	June 2000
The capacitance of a small circular Schottky diode for submillimeter wavelengths Louhi, J. T. IEEE Microwave and Guided Wave Letters, Vol. 4, Issue 4 https://doi.org/10.1109/75.282574	journal	April 1994
First Power Performance Demonstration of Flexible AlGaN/GaN High Electron Mobility Transistor Mhedhbi, S.; Lesecq, M.; Altuntas, P. IEEE Electron Device Letters, Vol. 37, Issue 5 https://doi.org/10.1109/LED.2016.2542921	journal	May 2016
Diode edge effect on doping-profile measurements Copeland, J. A. IEEE Transactions on Electron Devices, Vol. 17, Issue 5 https://doi.org/10.1109/T-ED.1970.16996	journal	May 1970
The influence of debye length on the C-V measurement of doping profiles Johnson, W. C.; Panousis, P. T. IEEE Transactions on Electron Devices, Vol. 18, Issue 10 https://doi.org/10.1109/T-ED.1971.17311	journal	October 1971
An improved forward I-V method for nonideal Schottky diodes with high series resistance Lien, C. -D.; So, F. C. T.; Nicolet, M. -A. IEEE Transactions on Electron Devices, Vol. 31, Issue 10 https://doi.org/10.1109/T-ED.1984.21739	journal	October 1984
Epitaxial Lift-Off and Transfer of III-N Materials and Devices from SiC Substrates Meyer, David J.; Downey, Brian P.; Katzer, D. Scott IEEE Transactions on Semiconductor Manufacturing, Vol. 29, Issue 4 https://doi.org/10.1109/TSM.2016.2599839	journal	November 2016
Photoelectrochemical liftoff of LEDs grown on freestanding c-plane GaN substrates Hwang, David; Yonkee, Benjamin P.; Addin, Burhan Saif Optics Express, Vol. 24, Issue 20 https://doi.org/10.1364/OE.24.022875	journal	January 2016
Progress and Prospect of the Growth of Wide-Band-Gap Group III Nitrides: Development of the Growth Method for Single-Crystal Bulk GaN Amano, Hiroshi Japanese Journal of Applied Physics, Vol. 52, Issue 5R https://doi.org/10.7567/JJAP.52.050001	journal	April 2013

Similar Records

Current transient spectroscopy for trapping analysis on Au-free AlGaN/GaN Schottky barrier diode

Journal Article · Sun Feb 22 23:00:00 EST 2015 · Applied Physics Letters · OSTI ID:22412721

Temperature dependent electrical characterisation of Pt/HfO{sub 2}/n-GaN metal-insulator-semiconductor (MIS) Schottky diodes

Journal Article · Tue Sep 15 00:00:00 EDT 2015 · AIP Advances · OSTI ID:22492338

Barrier height enhancement of Ni/GaN Schottky diode using Ru based passivation scheme

Journal Article · Mon Mar 31 00:00:00 EDT 2014 · Applied Physics Letters · OSTI ID:22261545

Thin-film GaN Schottky diodes formed by epitaxial lift-off

Citation Formats

References (28)

Similar Records

Related Subjects